By A. Perera
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Extra resources for Bolometers
01 ternary system. 19 Group IV Materials for Low Cost and High Performance Bolometers Fig. 13. A Schematic picture of a Si-based bolometer process (F. , 2007). The sc-SiGe/Si structure is transferred to the ROIC by low temperature adhesive wafer bonding and subsequent removal of the carrier. In 2010, Lapadatu et al. , 2010) proposed a novel approach to increase the fill factor. In their design the legs, which support the bolometer membrane and connect it to the ROIC, are built underneath the membrane as shown in Fig.
We calculated the detectivity values D* in the 3 structures. 5) film it is D*= 4x109 cmHz1/2W-1. 5) Region no. ) Frequency Regions Region no. 2 Region no. 98 30 10-11 10-16 Table 6. NSD at different frequency regions in the different microbolometers structures. 7. Microbolometers thermal characterization and calibration curve In order to estimate the temperature dependence of the thermal resistance of the microbolometers, I(U) measurements were performed in the range from 260 K to 360 K, as is shown in Fig.
Thin nickel films as absorbers in pyroelectric sensor arrays. Microelectronic Engineering, 29, 101-104. , & Liu, Z. (2007). c. reactive sputtering and annealing process. Surface and Coatings Technology, 201(9-11), 4969-4972. 211 Malyarov, V. , Khrebtov, I. , Kulikov, Y. , Shaganov, I. , Zerov, V. , & Vavilov, S. I. (1999). Comparative investigations of the bolometric properties of thin film structures based on vanadium dioxide and amorphous hydrated silicon. Proceedings of SPIE 3819 (Vol. 3819, pp.